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STS11NF30L N-channel 30V - 0.0085 - 11A SO-8 Low gate charge STripFETTM II Power MOSFET General features Type STS11NF30L VDSS 30V RDS(on) <0.009 ID 11A Optimal RDS(on) x Qg trade-off Conduction losses reduced S0-8 Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications Switching application Order codes Part number STS11NF30L Marking 11F30LPackage SO-8 Packaging Tape & reel January 2007 Rev 11 1/12 www.st.com 12 Contents STS11NF30L Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STS11NF30L Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 30 18 11 7 44 2.5 0.02 5.5 -55 to 150 150 Unit V V A A A W W/C V/ns C ID IDM(2) PTOT dv/dt(3) TJ Tstg Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Current limited by the package 2. Pulse width limited by safe operating area 3. ISD 11A, di/dt 370A/s, VDD V(BR)DSS, Tj TJMAX Table 2. Rthj-a Tl Thermal data Thermal resistance junction-ambient Max(1) Maximum lead temperature for soldering purpose 50 150 C/W C 1. When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec 3/12 Electrical characteristics STS11NF30L 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS = 0 VDS = Max rating VDS=Max rating, TC=125C VGS = 18V VDS = VGS, ID = 250A VGS = 10V, ID = 5.5A VGS = 5V, ID = 5.5A 1 0.0085 0.0105 0.0145 0.0190 Min. 30 1 10 100 Typ. Max. Unit V A A nA V IDSS IGSS VGS(th) RDS(on) Table 4. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge VDD = 15V, ID = 11A, VGS =5V VDS = 25V, f = 1 MHz, VGS = 0 Test conditions VDS = 25V, ID=5.5A Min. Typ. 15 1440 560 135 22.5 9 12 30 Max. Unit S pF pF pF nC nC nC 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 . Table 5. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Test conditions VDD=15 V, ID=5.5A, RG=4.7, VGS= 5V (see Figure 13) VDD = 15V, ID = 5.5A, RG = 4.7, VGS = 5V (see Figure 13) Min. Typ. 22 39 Max. Unit ns ns Turn-off-delay time Fall time 23 16 ns ns 4/12 STS11NF30L Table 6. Symbol ISD ISDM VSD (1) (2) Electrical characteristics Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 11A, VGS = 0 ISD = 11A, VDD = 20V di/dt = 100A/s, Tj = 150C (see Figure 15) 42 52 2.5 Test conditions Min Typ. Max 11 44 1.2 Unit A A V ns nC A trr Qrr IRRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 5/12 Electrical characteristics STS11NF30L 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/12 STS11NF30L Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics Figure 12. Normalized Breakdown Voltage vs Temperature 7/12 Test circuit STS11NF30L 3 Test circuit Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/12 STS11NF30L Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 9/12 Package mechanical data STS11NF30L SO-8 MECHANICAL DATA DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 10/12 STS11NF30L Revision history 5 Revision history Table 7. Date 09-Sep-2004 17-Aug-2006 12-Jan-2007 Revision history Revision 9 10 11 Complete version The document has been reformatted Updates in Safe operating area Changes 11/12 STS11NF30L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 |
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